Numerical modeling of highly doped Si:P emitters based on Fermi–Dirac statistics and self-consistent material parameters
نویسندگان
چکیده
منابع مشابه
Numerical modeling of highly doped Si:P emitters based on Fermi–Dirac statistics and self-consistent material parameters
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2002
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.1501743